Dec 1, 1999
Sep 1, 1999
This whitepaper details a systematic methodology for concurrent development of reactor-scale physical model and model-based process control development for metal-organic chemical vapor deposition (MOCVD). The example used for illustrating the approach is the...
Sep 1, 1999
Sep 1, 1999
In this white paper, we describe the numerical simulation of CVD process for epitaxial growth of silicon using trichlorosilane (SiHCl3). This study uses the one-step, finite-rate chemistry for the 2-D reactor geometry from the literature, and successfully reproduces...
Sep 1, 1999
