Model-Based Control of MOCVD Rate, Uniformity and Stoichiometry
S. Ghosal, J. L. Ebert, D. de Roover, and A. Emami-Naeini
Presented at the Third Symposium of Process Control, Diagnostics, and Modeling in Semiconductor Manufacturing, 195th Meeting of the Electrochemical Society, Seattle, May 2-6, 1999.
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- A 2D model of MOCVD reactor has been developed for deposition of YBCO thin films.
- System characterization showed the need for control of growth rate, deposition uniformity, and oxide stoichiometry at the surface.
- A run-to-run control architecture was developed, and is being implemented.
